PART |
Description |
Maker |
UPA808 UPA808T UPA808T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
UPA809 UPA809T UPA809T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 微波低噪声放大器NPN硅外延晶体管,内个元素迷你模
|
NEC, Corp. NEC[NEC]
|
Q62702-B127 BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) 硅调谐变容二极管(突变结调谐二极管调谐范25 V高品质因数)
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B599 BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Group
|
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
CK-L09505M521 CK-L09505D521 CK-L09623M511 CK-R2273 |
9250 MHz - 9750 MHz RF/MICROWAVE ISOLATOR 8400 MHz - 10700 MHz RF/MICROWAVE ISOLATOR 21200 MHz - 24200 MHz RF/MICROWAVE ISOLATOR 3400 MHz - 3500 MHz RF/MICROWAVE ISOLATOR 3600 MHz - 4200 MHz RF/MICROWAVE ISOLATOR 5800 MHz - 7200 MHz RF/MICROWAVE ISOLATOR 4300 MHz - 5100 MHz RF/MICROWAVE ISOLATOR 17300 MHz - 19700 MHz RF/MICROWAVE ISOLATOR
|
FDK CORP
|
BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) From old datasheet system
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
CU41K2B1P-902.5-1T CU41K2A1P-902.5-1T CU41K2B1P-14 |
890 MHz - 915 MHz RF/MICROWAVE ISOLATOR 1429 MHz - 1453 MHz RF/MICROWAVE ISOLATOR 100 MHz - 200 MHz RF/MICROWAVE 3 PORT CIRCULATOR 872 MHz - 905 MHz RF/MICROWAVE ISOLATOR 940 MHz - 960 MHz RF/MICROWAVE ISOLATOR
|
Samtec, Inc.
|
HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
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Mini-Circuits
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